Discrete SiC
Large portfolio of products with low on resistance
Overview
LTSCT’s application of SiC FETs offers numerous benefits for high-frequency power applications. These SiC FETs deliver high efficiency by reducing switching losses and improving overall energy conversion. They operate at higher switching frequencies than traditional silicon-based IGBTs, significantly enhancing performance while minimising energy loss.
In addition to their efficiency, the SiC FETs feature robust thermal management capabilities that ensure stable operation under high-power conditions and extend component lifespan. They provide a scalable solution that supports various power classes and motor types, making platform migration easier and reducing design complexity.
Key features
Optimised Performance
- Very Low On-Resistance
- Optimised Switching Behaviour
- Layout optimisation for easy processing
High Reliability and Robustness
- High oxide reliability
- High temperature rating (up to 200 C for bare dies)
Easy to use
- Flexible and simple to drive
- Gate resistors optimised for application
Product line-up
Technical resource
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