Power Modules
Helping you reduce losses, shrink footprints, and improve system uptime
Overview
The IGBT module is an advanced power semiconductor device designed to deliver high efficiency and energy savings. Utilising state-of-the-art Field Stop Trench gate technology, it ensures optimised switching performance and reduced power loss for high-demand applications.
LTSCT is engineering the future of high-performance power electronics with its next-generation High-Power SiC Modules. These modules are designed to provide superior energy efficiency, thermal stability, and scalability for modern mobility, industrial, and renewable-energy systems.
These ultra-efficient solutions leverage:
- Advanced SiC bare dies
- Proprietary power-module packaging techniques
- Integrated high-frequency drive capability
Key Benefits:
- Lower switching and conduction losses
- High-frequency operation with reduced parasitics
- Compact system design with advanced thermal management
- Maximum reliability and extended lifespan
- Lower total system cost
LTSCT’s SiC modules enable smarter, more efficient, and more compact power converter systems-ideal for next-gen EV drives, renewable energy systems, industrial automation, and data centre power infrastructure.
Key features
- Scalable large current easily handled by paralleling
- Equipped with current sensing terminals
- Low stray inductance and low Rth(j-c)
- High current density package
- Built-in temperature sensor
- Half bridge (2in1)
Product line-up
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